2010-№4(29) Article 13

I.A. Zeltser, E.N. Moos

Ion-implantation of boron, arsenic, helium, phosphorus, argon and nitrogen in crystal silicon. p.117-133

UDC 592:539. 2:537.533.2

The article provides the results of an experimental research investigating ion-implantation of boron, arsenic, helium, phosphorus, argon and nitrogen in crystal silicon. The paper highlights that the method of triple-crystal x-ray diffractometry shows high sensitivity to any violation of semiconductor crystal surfaces.

implantation, x-ray curve, interplane space, triple-crystal x-ray spectrometer.

References

1. Zeltser I.A. Trekhkristal’naya rentgenovskaya difraktometriya v issledovanii tonkikh kristallicheskikh sloev [Three-crystal X-ray diffractometry in the analysis of thin crystal layers]. Elektronnaya promyshlennost’ – Electronic Industry, 1982, no. 10-11, pp. 63-68.

2. Reivi K. Defekty i primesi v poluprovodnokovom kremnii [Defects and impurities in semiconductor silicon]. Moscow, Mir Publ., 1984, 320 p.

3. Rissel H., Ruge I., eds. Ionnaya implantatsiya [Ionic implantation]. Moskow, Nauka Publ., 1983, 360 p.

4. Sovremennye metody getterirovaniya v tekhnologii poluprovodnikovoy elektroniki [Modern methods of gettering in the technology of semiconductor electronics]. Zarubezhnaya elektronnaya tekhnika – Modern Foreign Technology, 1983, no. 11, pp. 74-79.