2011-№1(30) Article 12

I.A. Zeltser, E.N. Moos

Triple-Crystal X-Ray Diffractometry of Crystalline Silicon and Gallium Arsenide Thin Films. p. 136-159

UDC 592:539. 2:537.533.2

The article provides the experimental results of technological treatment (mechano-chemical polishing, chemical etching, ion etching, ion-beam implantation, epitaxy) of silicon and gallium arsenide. The experimental results demonstrate high sensitivity of triple-crystal X-ray diffractometry method to the damage to semiconductor crystal surface.

implantation, X-ray reflection curve, interplanar spacing, triple-crystal X-ray spectrometer, epitaxy.

References

1. Zel’cer, I.A. Trehkristal’naja rentgenovskaja difraktometrija v issledovanii tonkih kristallicheskih sloev [hree-crystal X-ray diffraction in the study of thin crystalline layers]/ I.A. Zel’cer, M.V. Koval’chuk, R.M. Imamov, R.S. Senichkina// Electron industry. – 1982. – Vyp. 10–11. – p. 63–68.

2. Zel’cer, I.A. Subatomnaja diagnostika kvazidvumernyh struktur v metode stojachih rentgenovskih voln [Subatomic diagnosis quasi-structures in the method of X-ray standing waves]: I.A. Zel’cer, E.N. Moos. – Rjazan’: Intermet, 2010. – Ch. 2. – 273 p.