2012-№3(36) Article 13

V.V. Tregulov, V.A. Stepanov

The investigation of the mechanisms of conductivity of heterojunctions cds/si(p) obtained by hydrochemical deposition of cadmium sulfide. р. 144–150

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UDC 621.383.51

 

The paper offers the results of a study of volt–ampere characteristics and temperature dependence of direct and reverse current of heterojunctions CdS/Si(p) obtained by hydrochemical deposition of cadmium sulfide. The paper maintains that heterojunction conductivity is determined by the processes of generation – recombination in space charge region.

 

volt–ampere characteristics, heterojunction, silicon, contact potential difference, space charge difference, surface states, recombination, cadmium sulfide, photoelectric transformer.

 

References

1. Tregulov, V. V. [Investigation of solarpower–based heterostructure CdS/ Si (p)]// Herald TGTU. – 2010. – Vol. 16. – № 4. – pp. 892–896.

2. Farenbuh, A. [Solar cells: theory and experiment] translation from English./ A. Farenbuh, R. Byub. – Moscow. ​​Energoatomizdat, 1987. – 280 p.

3. Sharma, B. L. [Semiconductor heterojunction] translation from English./ BL Sharma, RK Purohit. – Moscow: Soviet radio, 1979. – 232 p.

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